| PART |
Description |
Maker |
| MRF9030LSR1 MRF9030 MRF9030D MRF9030LR1 |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MRF9030MR1 |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270AA
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| TC14L TC11L TC11L003 TC11L007 TC14L040 TC11L005 TC |
7 K usable gate, 1.0 micron, CMOS gate array
300 usable gate, 1.5 micron, CMOS gate array
700 usable gate, 1.5 micron, CMOS gate array
4 K usable gate, 1.0 micron, CMOS gate array
500 usable gate, 1.5 micron, CMOS gate array
|
Toshiba Semiconductor
|
| STDH90 |
0.35 Micron STDH90 Library Introduction
|
Samsung Electronic
|
| OV20381 OV20381-GA5A |
20-Megapixel Second-Generation 1.0-Micron PureCel?Plus-S Sensor for Smartphones
|
OmniVision Technologies...
|
| STD80 |
0.5 Micron STD80 Standard Cell Library Introduction
|
Samsung Electronic
|
| OV20880 OV20880-GA5A |
20-Megapixel Second-Generation 1.0-Micron PureCel?Plus-S Sensor for Smartphones
|
OmniVision Technologies...
|
| JS28F00AP33BFA PC28F512P33EFA PC28F512P33TFA PC28F |
Micron Parallel NOR Flash Embedded Memory (P33-65nm)
|
Micron Technology
|
| N25Q00AA |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
|
Micron Technology
|
| N25Q128A13ESE40E |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A
|
Micron Technology
|
| N25Q128A13ESE40G |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A
|
Micron Technology
|
